Toshiba has managed to make a pretty major breakthrough with 3D NAND memory in combination with its pioneering new TSV (Through Silicon Via) technology that lowers power consumption, increases data transfer rates, and enables 1TB flash chips on a single stacked package.

The Japanese technology manufacturer claims this is the world’s first three-dimensional triple-level cell (TLC) memory chip that works in conjunction with TSV, allowing for previously unheard of storage densities.

The TSV aspect involves creating physical tunnels between the stacked 3D layers of silicon,  rather than the usual meshed wire approach. This direct connection between all of the memory layers means 1GB/s data rates are achievable, as well as reducing power draw by as much as 50%.

To the end user, this now means faster, more efficient, and denser solid state memory chips will become available. Toshiba demonstrated the TSV BiCS flash chips in 256GB. 512GB and 1TB varieties, with the 1TB chip taking up a space no larger than a postage stamp. A typical SSD has eight or so of these flash chips in an array, meaning an 8TB SSD in a more affordable package could become a real possibility.

“Toshiba Memory Corporation will commercialise BiCS FLASH with TSV technology to provide an ideal solution in respect for storage applications requiring low latency, high bandwidth and high IOPS/Watt, including high-end enterprise SSDs," said Toshiba in a statement.

The first prototypes are now being sent out to hardware partners with manufacturing set to take place later this year.

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